| 摘要 |
PROBLEM TO BE SOLVED: To provide an image sensor that improves the integration of elements, while adopting a vertical type photodiode, and to provide method of manufacturing the same. SOLUTION: The image sensor includes a transistor which is formed in a pixel region of a first substrate; a first insulation layer which includes first metal wiring which are arranged on the first substrate and are connected to the transistor, respectively; a crystal type semiconductor layer on the first insulation layer; a photodiode which is formed in the crystal type semiconductor layer by ion implantation configured to correspond to the pixel region; a dummy region which is formed in the crystal type semiconductor layer except the photodiode; a via contact which penetrates the dummy region so as to be connected to the first metal wiring; and a second insulation layer which includes a plurality of second metal wirings which are arranged on the crystal type semiconductor layer so that the via contact may be electrically connected to the photodiode. COPYRIGHT: (C)2009,JPO&INPIT
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