SOURCE-DRAIN CURRENT MODELING METHOD AND DEVICE OF THIN FILM TRANSISTOR

摘要

PROBLEM TO BE SOLVED: To provide a source-drain current modeling method and device of a thin film transistor. SOLUTION: A source-drain current modeling method of this thin film transistor includes: a stage of inputting sample data including a sample input value and a sample output value; a stage of adjusting modeling variables correspondingly to the sample data; a stage of calculating a current model value correspondingly to the adjusted modeling variables; a stage of fitting the current model by applying the adjusted modeling variables to the current model in the case when a result value of comparing the calculated current model value with the sample output value is smaller than a preset reference value; a stage of inputting actual input data to the fitted current model; and a stage of outputting the result value correspondingly to the actual input data. The current model is the model of predicting the source-drain current of the thin film transistor. COPYRIGHT: (C)2009,JPO&INPIT