| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device having embedded wiring, wherein plating components deposited on the interlayer insulating film have been selectively removed. SOLUTION: The method of manufacturing a semiconductor device having a wiring layer embedded in an interlayer insulating film includes a process of forming an interlayer insulating film on a semiconductor substrate, a process of forming a trench on the interlayer insulating film; a process of forming a barrier metal layer for covering the surface of the interlayer insulating film and the inside of the trench; a process of forming a metal layer of copper to embed the trench in the barrier metal layer; a CMP process of removing the metal layer and the barrier metal layer on the interlayer insulating film by a CMP method and leaving the barrier metal layer and the metal layer in the trench; a process of forming a cap metal on the metal layer; a drying process of irradiating plasma to the interlayer insulating film, to form an alteration layer on the surface of the interlayer insulation film; and a wetting process of selectively removing the alteration layer. COPYRIGHT: (C)2009,JPO&INPIT
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