SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device having embedded wiring, wherein plating components deposited on the interlayer insulating film have been selectively removed. SOLUTION: The method of manufacturing a semiconductor device includes a process of forming an interlayer insulating film on a semiconductor substrate; a process of forming a trench on the interlayer insulating film; a process of forming a barrier metal layer to cover the surface of the interlayer insulating film and the inside of the trench; a process of forming a metal layer of copper, to embed the trench in the barrier metal layer; a process of removing the metal layer and the barrier metal layer on the interlayer insulating film by a CMP method and leaving the barrier metal layer and the metal layer in the trench; a process of forming a cap metal on the metal layer; a process of diffusing a cap metal layer material in the metal layer by heat treatment, to form a cap diffusion layer under the cap metal layer; and a process of removing the cap metal layer by the CMP method and leaving the metal layer coated with the cap diffusion layer as a wiring layer in the trench. COPYRIGHT: (C)2009,JPO&INPIT