| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor apparatus which forms a minute impurity diffusion region, and to provide the semiconductor apparatus and a solid-state imaging apparatus. SOLUTION: The method of manufacturing the semiconductor apparatus, in which the impurity diffusion region 8 is formed on a semiconductor substrate 1 through ion pouring, includes: a step of forming an underground layer 4, having a hole unit 4a opened with a predetermined width based on the position of the impurity diffusion region 8, on the semiconductor substrate 1; a step of forming a diffusion suppressing film 6, having a cavity 6a in the hole unit 4a, on the underground layer 4; and a step of forming the impurity diffusion region 8 at the lower position of the cavity 6a through ion pouring of impurity into the semiconductor substrate 1 from the upper part of the diffusion suppressing film 6. COPYRIGHT: (C)2009,JPO&INPIT
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