| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device which solves the conventional problems, and enhances respective characteristics in a region of a different polarity on an identical substrate without influencing micro fabrication of the semiconductor device. SOLUTION: The method of manufacturing the semiconductor device includes the steps of: forming a sidewall underlying film 9 covering the whole of a first region and the whole of a second region; forming a sidewall film 10 on a side face of a first gate structure and a second gate structure on the sidewall underlying film 9; forming a cover film 11 covering the whole of the first region and the whole of the second region; and removing the sidewall underlying film 9 and the cover film 11 in the second region, wherein only the sidewall underlying film 9 covered by the sidewall film 10 is left. COPYRIGHT: (C)2009,JPO&INPIT
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