| 摘要 |
PROBLEM TO BE SOLVED: To suppress leakage current running through an insulating film prepared between a charge storage layer and a control gate electrode layer. SOLUTION: The inter-gate insulating film 7 is made up in a laminated structure of a lower-layer insulating film 7a, a high-dielectric insulating film 7b and an upper-layer insulating film 7c. The lower-layer insulating film 7a is made up in a laminated structure of a silicon nitride film 7aa, a silicon oxide film 7ab, an interface layer 7ac and a silicon oxide film 7ad. The interface layer 7ac is prepared as a charge trap layer. This can control leakage current especially at a write time, and can achieve characteristic improvement. COPYRIGHT: (C)2009,JPO&INPIT
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