| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor integrated circuit device which attains ESD resistance with a simple structure. SOLUTION: The semiconductor integrated circuit device has a first circuit, a second circuit and an electrostatic protective circuit. The first circuit is constituted using a MOSFET having a first withstand voltage corresponding to a first supply voltage, the second circuit is constituted to have a withstand voltage corresponding to a second supply voltage by cascode-connecting a MOSFET having the first withstand voltage, and the electrostatic protective circuit has an electrostatic protective MOSFET provided between a second supply voltage terminal to which the second supply voltage is supplied and a ground potential point of the circuit and having a withstand voltage corresponding to the second supply voltage by cascode-connecting a MOSFET having the first withstand voltage, and a voltage supply circuit temporarily holding a back gate of the electrostatic protective MOSFET at a potential higher than the ground potential in response to a voltage generated by static electricity from a second supply voltage terminal. COPYRIGHT: (C)2009,JPO&INPIT
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