发明名称 3-D SEMICONDUCTOR DIE STRUCTURE WITH CONTAINING FEATURE AND METHOD
摘要 A die-on-die assembly has a first die (10) and a second die (50). The first die (10) has a first contact extension (28,42) and a peg (32,44,45) extending a first height above the first die. The second die (50) has a second contact extension (68) connected to the first contact extension and has a containing feature (62) extending a second height above the second die surrounding the peg. The peg extends past the containing feature. Because the peg extends past the containing feature, lateral movement between the first and second die can cause the peg to come in contact with and be constrained by the containing feature. The peg and containing feature are thus useful in constraining movement between the first and second die.
申请公布号 US2009166888(A1) 申请公布日期 2009.07.02
申请号 US20070966077 申请日期 2007.12.28
申请人 发明人 POZDER SCOTT K.;CHATTERJEE RITWIK
分类号 H01L23/538;H01L21/60 主分类号 H01L23/538
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