METHOD FOR FORMING A PLURALITY OF METAL LINES IN A SEMICONDUCTOR DEVICE USING DUAL INSULATING LAYER

摘要

A method for forming a plurality of metal lines in a semiconductor device including forming first insulating layer patterns on a semiconductor substrate, the first insulating patterns being spaced from each other; depositing a metal layer on and between the first insulating layer patterns; planarizing the metal layer; patterning the planarized metal layer to form the plurality of metal lines between the first insulating layer patterns; and forming a second insulating layer on and between the metal lines.