发明名称 |
METAL LINE OF SEMICONDUCTOR DEVICE WITHOUT PRODUCTION OF HIGH RESISTANCE COMPOUND DUE TO METAL DIFFUSION AND METHOD FOR FORMING THE SAME |
摘要 |
A metal line includes a lower metal line formed on a semiconductor substrate. An insulation layer is formed on the semiconductor substrate having the lower metal line, and a metal line forming region exposing at least a portion of the lower metal line is defined in the insulation layer. A diffusion barrier is formed on a surface of the metal line forming region of the insulation layer and includes a WNx layer, a W-N-B ternary layer, and a Ti-N-B ternary layer. A wetting layer is formed on the diffusion barrier and is made of one of a Ti layer or a TiN layer. An upper metal line is formed on the wetting layer to fill the metal line forming region of the insulation layer.
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申请公布号 |
US2009166871(A1) |
申请公布日期 |
2009.07.02 |
申请号 |
US20080328988 |
申请日期 |
2008.12.05 |
申请人 |
KIM BAEK MANN;YEOM SEUNG JIN;JUNG DONG HA;KIM JEONG TAE |
发明人 |
KIM BAEK MANN;YEOM SEUNG JIN;JUNG DONG HA;KIM JEONG TAE |
分类号 |
H01L23/52;H01L21/033 |
主分类号 |
H01L23/52 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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