发明名称 Substrate Treatment Device and Manufacturing Method of Semiconductor Device
摘要 An object of the invention is to provide a substrate treatment device that can lengthen the maintenance cycle, and prevent any by-product from falling on substrates even if it is accumulated, and a manufacturing method of such a substrate treatment device, and an embodiment of the invention is directed, comprising: a treatment chamber that subjects a substrate to a treatment while keeping hold of it by a substrate retention member; a reaction tube that configures the treatment chamber; a heating device that is disposed around the reaction tube for heating the treatment chamber; and an exhaust tube that is linked to the reaction tube on an upper side than the substrate inside of the treatment chamber and is extended downward from the heating device, and exhausts a gas inside of the reaction tube in which an extension portion as a result of the extension is disposed away from the reaction tube.
申请公布号 US2009170338(A1) 申请公布日期 2009.07.02
申请号 US20070225432 申请日期 2007.08.03
申请人 HITACHI KOKUSAI ELECTRIC INC. 发明人 TERASAKI MASATO;MORITA SHINYA;IZUMI MANABU
分类号 H01L21/30;B05C11/00 主分类号 H01L21/30
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