| 摘要 |
<p>A manufacturing method of a semiconductor device is provided to improve a property of a device by forming a shallow junction of a PMOS device. After a gate poly(208) is formed on a semiconductor substrate(200), a LDD(Lightly Doped Drain)(204) is formed. A spacer is formed in a side of the gate poly. An amorphous layer is formed on the LDD through a first ion injection process(214). A second ion injection process is performed in amorphous/crystalloid interface. After the second ion injection process, a third ion injection process for forming a junction is performed. A source/drain region of a shallow junction is formed by performing a non-diffusion annealing.</p> |
