| 发明名称 |
LIGHT-EMITTING DEVICE HAVING INHOMOGENEOUS QUANTUM WELL ACTIVE REGION |
| 摘要 |
<P>PROBLEM TO BE SOLVED: To allow a high-quality quantum well in a green and deep-ultraviolet wavelength range to grow. <P>SOLUTION: This light-emitting device includes a first quantum well; and a first lower layer which is included in the first quantum well, and in which an alloy composition of one layer of the first lower layer is different from composition of another layer of the first lower layer, and the wavelength of light emitted by the first quantum well is prescribed by the band gap of average composition of the first lower layer. <P>COPYRIGHT: (C)2009,JPO&INPIT |
| 申请公布号 |
JP2009147340(A) |
申请公布日期 |
2009.07.02 |
| 申请号 |
JP20080315460 |
申请日期 |
2008.12.11 |
| 申请人 |
PALO ALTO RESEARCH CENTER INC |
发明人 |
CHRISTOPHER L CHUA;YANG ZHIHONG;NORTHRUP JOHN E;NOBLE M JOHNSON |
| 分类号 |
H01L21/205;H01L33/06;H01L33/32 |
主分类号 |
H01L21/205 |
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