| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device that prevents erosion of interconnects and vias while the interconnects and vias are well embedded, thus being excellent in reliability, and to provide a method of fabricating the same. SOLUTION: The method of fabricating the semiconductor device includes the steps of forming an insulating film onto a semiconductor substrate, forming a recess in the insulating film, forming a precursor film that includes a predetermined metal element on a surface of the insulating film where the recess is formed, reacting the precursor film with the insulating film through heat treatment to form an insulating self-forming barrier film having a chemical compound containing as main constituent elements of the predetermined metal element and insulating film at the boundary phase, removing the unreacted precursor film after the insulating self-forming barrier film is formed, forming a conductive film, made at least of one of Ru and Co, onto the insulating self-forming barrier film from which the unreacted precursor film has been removed, depositing a wiring material film onto the conductive film, and planarizing the wiring material film to form a wiring structure. COPYRIGHT: (C)2009,JPO&INPIT |
