| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device such that while a defect due to an inter-wiring short is securely prevented in spite of microfabrication, EM resistance can be improved more, and to provide a manufacturing method thereof. SOLUTION: A wiring groove is formed in a first interlayer dielectric 2 on a semiconductor substrate 1; a first Cu wiring 5 is formed by depositing a first Cu film 4 in the wiring groove; a first liner film 6 is formed on the first Cu wiring 5 and the first interlayer dielectric 2; an opening 13 is formed in a part of the first liner film 6 positioned above the first Cu wiring 5 so that the surface of the first Cu wiring 5 is exposed therefrom; and a cap metal film 7 is formed on the surface of the first Cu wiring 5 which is exposed in the opening 13. COPYRIGHT: (C)2009,JPO&INPIT |
