发明名称 FILM DEPOSITION SYSTEM
摘要 <p><P>PROBLEM TO BE SOLVED: To mass-produce a product obtained by coating a workpiece made of a metallic material, whose volume resistivity is smaller than that of silicon, with a film formed with the movement of ions in plasma, in high yield. <P>SOLUTION: A film deposition system comprises: a film deposition part 54 including two electrodes for covering a substrate 90 with a DLC film by generating plasma between the two electrodes; a chamber 12 where a plurality of the film deposition parts 54 are installed; and a pulse power source part 60 including electric circuits 62 provided at the plurality of the film deposition parts 54, respectively, for applying DC pulse voltage to a space between a support electrode 51 and a counter electrode 52 in each film deposition part 54. <P>COPYRIGHT: (C)2009,JPO&INPIT</p>
申请公布号 JP2009144237(A) 申请公布日期 2009.07.02
申请号 JP20080247728 申请日期 2008.09.26
申请人 NGK INSULATORS LTD 发明人 SAITO TAKAO;TERASAWA TATSUYA
分类号 C23C16/54;C23C16/27;C23C16/42;C23C16/50;C23C16/515 主分类号 C23C16/54
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