| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which reduces IR and includes a JBS structure having high-speed recovery characteristics. SOLUTION: The semiconductor device includes a JBS structure wherein a Schottky junction and a PN junction are formed in parallel on one semiconductor substrate. In this case, a local lifetime control area 12 is formed by irradiation of particle beam. A distance L (unit:μm) between a PN junction boundary 9 and the upper surface of the local lifetime control area 12 satisfies a relationship shown by a formula 1, L<SB>0</SB>>L>(2ε<SB>r</SB>ε<SB>0</SB>V<SB>r</SB>/qN<SB>D</SB>)<SP>1/2</SP>, wherein, L<SB>0</SB>(unit:μm): thickness of the semiconductor layer where the Schottky junction boundary is formed; V<SB>r</SB>(unit: V): reverse bias voltage applied to the semiconductor device; N<SB>D</SB>(unit: cm<SP>-3</SP>): impurity concentration of a first semiconductor layer 2;ε<SB>0</SB>(unit: Fcm<SP>-1</SP>): dielectric ratio in vacuum;ε<SB>r</SB>: specific inductive capacity of the first semiconductor layer 2; q (unit: C): unit charge. COPYRIGHT: (C)2009,JPO&INPIT |
