发明名称 METHOD FOR MANUFACTURING LEAD FRAME TYPE SUBSTRATE, AND SEMICONDUCTOR SUBSTRATE
摘要 PROBLEM TO BE SOLVED: To solve the problem, in a lead frame type substrate, of the limitation in fine pitch about 60μm in line thickness, and of necessity for pasting a polyimide tape for preventing infiltration of resin into a rear side when a plurality of chips are collectively sealed with resin, resulting in increase of cost. SOLUTION: The method for manufacturing a lead frame type substrate includes, at least, a process for coating a photosensitive resist 2 on both surfaces of a metal plate 1, a process in which the photosensitive resist is pattern-exposed for development and a connecting post is formed on one side of the metal plate while a resist pattern 3 for wiring is formed on the other side, a process in which the metal plate is etched down to the middle from one side to form a connecting post 5, a process in which a liquid resin for pre-molding is applied on the etched surface to form a pre-mold layer 11, a process in which the other side of the metal plate is etched to form a wiring pattern 6, and a process for peeling the resist pattern. COPYRIGHT: (C)2009,JPO&INPIT
申请公布号 JP2009147117(A) 申请公布日期 2009.07.02
申请号 JP20070323040 申请日期 2007.12.14
申请人 TOPPAN PRINTING CO LTD 发明人 HANAMURA SHINICHI;MOTOMURA JIN
分类号 H01L23/50;H01L23/12;H01L23/32 主分类号 H01L23/50
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