ERASING METHOD AND SOFT PROGRAMMING METHOD OF NON VOLATILE MEMORY DEVICE

摘要

An erasing method and a soft programming method of a nonvolatile memory device are provided to prevent disturbance margin reduction of a memory cell adjacent to a selection transistor by preventing soft program about the memory cell adjacent to the selection transistor. An erasing operation about a memory cell block is performed(310). A hard erasing verification about the memory cell block is performed(320). A soft program operation about the memory cell block is performed(330). A soft program operation about an outermost cell is not performed. A verifying operation about the soft program operation is performed(340). A soft erasing verification about the memory cell block is performed(350). A disturbing stress test about the memory cell block is performed(360). A verifying operation about the disturbing stress test is performed(370).