| 摘要 |
A manufacturing method of a CMOS image sensor is provided to minimize deformation of metal due to a thermal and compressive stress by forming a capping film and an IMD(Inter-Metal Dielectric) film. A metal(120) is formed on a semiconductor substrate(110). An IMD film(130) having expansibility is formed on the semiconductor substrate including the metal. The IMD film is flattened. A capping film(140) is formed on the IMD film. The metal has a laminated structure of Ti/AlCu/TiN, Ti/AlCu/Ti/TiN, Ti/TiN/AlCu/TiN, or Ti/TiN/AlCu/Ti/TiN. The IMD film is formed by O3-TEOS. The capping film is formed by PE-TEOS.
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