| 摘要 |
A chemical-mechanical polishing apparatus is provided to increase flattening uniformity of a wafer during a polishing process by controlling pressure applied according to a step height of the wafer. A wafer supporting stand(10) fixes a wafer(20). A polishing pad(30) flattens a top part of the wafer. A head(40) rotates the polishing pad by applying pressure to the polishing pad. A pressure control part(50) is formed between the head and the polishing pad, and applies local pressure of the polishing pad. The pressure control part is formed by an air line or a hydraulic line. The pressure control part has a plurality of annular shapes.
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