| 摘要 |
A manufacturing method of a CMOS image sensor is provided to deliver a signal received from a photo diode to a gate of a source follower transistor without loss by low controlling potential of a floating diffusion region in comparison with a bottom part of a spacer of a gate electrode. A gate electrode(114) is formed on a predetermined region of a semiconductor substrate(110) in which a photo diode region and a floating diffusion region are defined. A first dopant region of a first conductive type and a first dopant region of a second conductive type are formed on the floating diffusion region. A spacer(200) is formed in both side walls of the gate electrode. A second dopant region of the second conductive type is formed on the first dopant region of the second conductive type of the floating diffusion region. A source/drain region(126) is formed on a predetermined region of the floating diffusion region. An ion injection for forming the first conductive type and an ion injection for forming the second conductive type are performed at the same time.
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