| 摘要 |
A method for forming an isolation film of a semiconductor device is provided to remove a map defect by performing an SH cleaning process in case an annealing process is omitted. A pad film is formed on a semiconductor substrate(S101). A trench is formed by removing the pad film and the semiconductor substrate(S102). The trench is flattened by filling an insulation film(S107,S108). The pad film is removed(S109). An SH cleaning process is performed about the semiconductor substrate in which the pad film is removed(S110).
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