发明名称 METHOD AND APPARATUS FOR GROWING SEMICONDUCTOR SINGLE CRYSTAL CAPABLE OF HIGH SPEED PULLING AND COOLING TUBE FOR THE SAME
摘要 A method and an apparatus for growing a single crystalline ingot, and a cooling tube for the same are provided to rapidly deliver a heat emitted in a silicon single crystalline ingot to outside by cooling a cooling pipe through a thermoelement. A thermoelement(102) is bonded to a cooling pipe(100). The cooling pipe surrounds a single crystalline ingot. A thermal history of the single crystalline ingot is controlled by operating the thermoelement during a raising process. A plurality of thermoelements is arranged in different points on the cooling pipe. The thermal history is differently controlled according to a position of the single crystalline ingot by differently controlling a current flowed to each thermoelement. The thermoelement is operated in order to maintain temperature of the cooling pipe.
申请公布号 KR20090071832(A) 申请公布日期 2009.07.02
申请号 KR20070139750 申请日期 2007.12.28
申请人 SILTRON INC. 发明人 LEE, SANG HOON;KIM, SANG HEE;LEE, JAE EUN;OH, HYUN JUNG
分类号 C30B15/20;C30B15/30 主分类号 C30B15/20
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