发明名称 |
METHOD AND APPARATUS FOR GROWING SEMICONDUCTOR SINGLE CRYSTAL CAPABLE OF HIGH SPEED PULLING AND COOLING TUBE FOR THE SAME |
摘要 |
A method and an apparatus for growing a single crystalline ingot, and a cooling tube for the same are provided to rapidly deliver a heat emitted in a silicon single crystalline ingot to outside by cooling a cooling pipe through a thermoelement. A thermoelement(102) is bonded to a cooling pipe(100). The cooling pipe surrounds a single crystalline ingot. A thermal history of the single crystalline ingot is controlled by operating the thermoelement during a raising process. A plurality of thermoelements is arranged in different points on the cooling pipe. The thermal history is differently controlled according to a position of the single crystalline ingot by differently controlling a current flowed to each thermoelement. The thermoelement is operated in order to maintain temperature of the cooling pipe.
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申请公布号 |
KR20090071832(A) |
申请公布日期 |
2009.07.02 |
申请号 |
KR20070139750 |
申请日期 |
2007.12.28 |
申请人 |
SILTRON INC. |
发明人 |
LEE, SANG HOON;KIM, SANG HEE;LEE, JAE EUN;OH, HYUN JUNG |
分类号 |
C30B15/20;C30B15/30 |
主分类号 |
C30B15/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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