发明名称 |
TRANSISTOR AND METHOD OF FORMING THE SAME |
摘要 |
According to some embodiments of the invention, a fin type transistor includes an active structure integrally formed with a silicon substrate. The active structure includes grooves that form blocking regions under source/drain regions. A gate structure is formed to cross the upper face of the active structure and to cover the exposed side surfaces of the lateral portions of the active structure. An effective channel length of a fin type transistor may be sufficiently ensured so that a short channel effect of the transistor may be prevented and the fin type transistor may have a high breakdown voltage.
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申请公布号 |
US2009170271(A1) |
申请公布日期 |
2009.07.02 |
申请号 |
US20090397176 |
申请日期 |
2009.03.03 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
YOON JAE-MAN;LEE CHOONG-HO;PARK DONG-GUN;LEE CHUL |
分类号 |
H01L21/426;H01L29/78;H01L21/335;H01L21/336;H01L29/76 |
主分类号 |
H01L21/426 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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