| 摘要 |
Provided is a method for manufacturing, with improved productivity, a photoelectric conversion device having high conversion efficiency. The method includes an n-layer forming step wherein a substrate arranged in a film-forming chamber under depressurized environment is brought into a state heated by a heating means, a material gas is supplied into the film-forming chamber, and an n-layer composed of crystalline silicon is formed on the substrate by supplying power to a discharge electrode arranged to face the substrate. Furthermore, in the n-layer forming step, the n-layer is formed by setting the pressure in the film-forming chamber at 500Pa or more but not more than 1,000Pa, and a distance between the substrate and the discharge electrode at 6mm or more but not more than 12mm. |
