| 摘要 |
A post-cleaning method of a photoresist pattern is provided to completely remove residue of a hardening photoresist pattern by removing a part of an insulation film by an additional cleaning process using HF and H2O2 solution. An insulation film(10) is formed on a semiconductor substrate. After forming a photoresist pattern, an ion injection process of high concentration and high energy is performed. A process for removing the photoresist pattern is performed. A residue(16a) of the photoresist pattern is removed by performing a post-cleaning process using piranha and SC-1 solution. A part(14b) of the insulation film together with the residue of the photoresist pattern is removed by performing an additional cleaning process using HF and H2O2 solution. The post-cleaning process is performed with a megasonic process during the SC-1 cleaning process.
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