| 摘要 |
A manufacturing method of a nonvolatile memory device is provided to reduce a manufacturing cost of a device and a process time by etching an ONO(Oxide Nitride Oxide) film formed on a peripheral region and a polysilicon film for a floating gate at the same time. An isolation film is formed on a semiconductor substrate(101) which is defined into a flash cell region and a peripheral region. A tunnel oxide film and a polysilicon film are successively formed on a whole surface of the semiconductor substrate. A floating gate(110a) is formed by selectively removing the polysilicon film formed on the flash cell region of the semiconductor substrate. An ONO film(113) is formed on a whole surface of the semiconductor substrate including the floating gate. The polysilicon film and the ONO film formed on the peripheral region of the semiconductor substrate are removed at the same time.
|
