| 摘要 |
A method for forming a pattern, a manufacturing apparatus for semiconductor and storage media are provided to increase the process freedom degree by forming a micro-pattern in the selected insulating layer among laminated insulating layers. The pattern formation method comprises a formation step of the first and second insulating layers(21, 22), a formation step of first spacers(38a, 38b, 38c), an etch step of the second insulating layer, and a formation step of second spacers and an etch step of the first insulating layer. The formation step of the first and second insulating layers is performed in order to successively form the first and second insulating layers on the substrate(W). The substrate has a mask pattern on the second insulating layer. The mask pattern has a line shape. The formation step of the first spacer is performed in order to form on the side walls of the mask pattern. The mask pattern is removed after the formation step of first spacers is performed. |
