| 摘要 |
A CMOS image sensor is provided to reduce a charge trap due to a strong electric field between a gate and a source by forming a pinning layer on a high concentration dopant region. A CMOS image sensor includes a source follower(SF), a reset transistor(Rx), and a line selection transistor(LS). In a PPD(Pinned Photo Diode)(17a), a P-type dopant region is doped on an N-type photo diode surface formed inside a substrate(10). A spacer(14) is formed on both side walls of a gate of the reset transistor. A source region and a drain region(16a,16b) are doped as a first concentration inside the substrate of both sides of the reset transistor. A P-type pinning layer(17b) is formed on a bottom surface of the spacer of the source region of the reset transistor.
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