| 摘要 |
PROBLEM TO BE SOLVED: To provide a high-sensitivity quantum dot type infrared ray detector for eliminating the dip in a potential distribution in an intermediate part adjacent to quantum dots by adopting an extremely simple measures, thereby suppressing a dark current. SOLUTION: In the quantum dot type infrared ray detector in which a region where the quantum dots 25 are buried with an intermediate layer 24 is an infrared ray absorption part, the carrier concentration of an intermediate layer part 24A which is a part of the intermediate layer including the periphery of the quantum dots 25 at least is different from that of the other intermediate layer 24, and the conductivity type of the intermediate layer part 24A is opposite to respective upper side and lower side contact layers 23 and 26 across the intermediate layer 24. COPYRIGHT: (C)2009,JPO&INPIT
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