| 摘要 |
PROBLEM TO BE SOLVED: To provide a method and device for manufacturing a semiconductor device that performs substrate processing with sufficient reproducibility, even if a surface state of an inner wall of a processing chamber fluctuates. SOLUTION: In a heating step for heating a semiconductor substrate arranged in the processing chamber 10, an emissivity meter 8 measures emissivity of a sidewall inner face 1s dissipating heat to the semiconductor substrate disposed in the processing chamber 10. A thermo-couple 4 measures a temperature of a sidewall 1. A temperature of the semiconductor substrate arranged in the processing chamber 10 is acquired based on the relationship of emissivity which is previously acquired in accordance with the measured temperature of the sidewall 1 and an actual temperature of the semiconductor substrate disposed in the processing chamber 10. A heater 3 adjusts the temperature of the sidewall 1 while the semiconductor substrate installed in the processing chamber 10 reaches a target temperature based on the acquired temperature of the semiconductor substrate. COPYRIGHT: (C)2009,JPO&INPIT
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