| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device for removing a thick hard mask in a short time suppressing an influence given to a structure under the hard mask. SOLUTION: The method of manufacturing a semiconductor device includes the steps of depositing a first nitride film on a substrate, removing the first nitride film on the semiconductor substrate of a first element isolating and forming region, forming a first element isolating layer on the first element isolating and forming region, filling the first element isolating and forming region with a first oxide film for isolating the element, depositing a second nitride film, depositing a stopper film composed of a-Si, poly-Si, a-SiGe, or poly-SiGe on the second nitride film, depositing a mask material on the stopper film, removing the mask material on the semiconductor substrate of a second element isolating and forming region, forming a second element isolating layer at a level deeper than the level of the first element isolating layer, removing the mask material using the stopper film as a stopper, and removing the stopper film and the first and second nitride films leaving the first oxide film. COPYRIGHT: (C)2009,JPO&INPIT
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