发明名称 |
Copper Discoloration Prevention Following Bevel Etch Process |
摘要 |
A method of bevel edge etching a semiconductor substrate having exposed copper surfaces with a fluorine-containing plasma in a bevel etcher in which the semiconductor substrate is supported on a semiconductor substrate support comprises bevel edge etching the semiconductor substrate with the fluorine-containing plasma in the bevel etcher; evacuating the bevel etcher after the bevel edge etching is completed; flowing defluorinating gas into the bevel etcher; energizing the defluorinating gas into a defluorination plasma at a periphery of the semiconductor substrate; and processing the semiconductor substrate with the defluorination plasma under conditions to prevent discoloration of the exposed copper surfaces of the semiconductor substrate upon exposure, the discoloration occurring upon prolonged exposure to air. |
申请公布号 |
US2009170334(A1) |
申请公布日期 |
2009.07.02 |
申请号 |
US20080341384 |
申请日期 |
2008.12.22 |
申请人 |
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发明人 |
FANG TONG;BAILEY, III ANDREW D.;KIM YUNSANG;RIGOUTAT OLIVIER;STOJAKOVIC GEORGE |
分类号 |
H01L21/3065 |
主分类号 |
H01L21/3065 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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