SOLID-STATE IMAGING ELEMENT, SOLID-STATE IMAGING DEVICE AND MANUFACTURING METHOD THEREOF

摘要

There are provided a CCD solid-state imaging device having a read-out channel area reduced, and thus having a large ratio of a photo diode surface area relative to an area of a pixel. The solid-state imaging device includes a first conductivity type semiconductor layer; a first conductivity type columnar semiconductor layer formed on the first conductivity type semiconductor layer; a second conductivity type photoelectric conversion region having an amount of electrical charge varied upon reception of light, formed over the first conductivity type columnar semiconductor layer, and a first conductivity type heavily doped impurity region formed over the surface of the second conductivity type photoelectric conversion region, at a given interval from the upper end of the first conductivity type columnar semiconductor layer, wherein a transfer electrode is formed on a side surface of the first conductivity type columnar semiconductor layer via a gate insulating film, and a second conductivity type CCD channel region is formed below the transfer electrode, and a read-out channel is formed in a region sandwiched between the second conductivity type photoelectric conversion region and the second conductivity type CCD channel region.