| 发明名称 |
NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE FOR REDUCING POLARIZATION |
| 摘要 |
A nitride semiconductor light emitting device is provided to maximize internal quantum efficiency by forming a quaternary nitride layer having optimized In/Al molar ratio inside a quantum barrier layer. A nitride semiconductor light emitting device includes an active layer(150) between an N-type nitride layer(120) and a P-type nitride layer(170). The active layer is formed by laminating a quantum barrier layer and a quantum well layer(150a) by turns. At least one among the quantum barrier layers includes a quaternary nitride layer(150b2) formed by AlX1Ga1-x1-y1Iny1N(0<X1<=1, 0<y1<=1, 0<X1+y1<=1) having a fixed In/Al molar ratio and at least one nitride layer(150b1,150b3) formed by AlX2Ga1-x2-y2Iny2N(0<=X2<X1, 0<=y2<y1) in a top surface or a bottom surface of the quaternary nitride layer. |
| 申请公布号 |
KR20090072444(A) |
申请公布日期 |
2009.07.02 |
| 申请号 |
KR20070140550 |
申请日期 |
2007.12.28 |
| 申请人 |
SAMSUNG ELECTRO-MECHANICS CO., LTD. |
发明人 |
YOON, SUK HO;SONE, CHEOL SOO;SAKONG, TAN |
| 分类号 |
H01L33/06 |
主分类号 |
H01L33/06 |
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