| 摘要 |
A method for forming a metal contact of a semiconductor device is provided to prevent a not-open phenomenon and a filling error by forming a first contact plugs film after selectively exposing a bit line. A bit line(110) including a hard mask film(111) is formed on a substrate(100) including a cell region and a peripheral region. A first interlayer insulation film(121) including a storage node contact(120) connected to the cell region is formed on the substrate on which the bit line is formed. An etch stop film(130) is formed on the first interlayer insulation film. A capacitor(140) of a cylinder structure connected to the storage node contact is formed on the cell region. A second interlayer insulation film is formed on a whole surface of the substrate including the capacitor. A first metal contact hole which selectively exposes the etch stop film is formed by etching the second interlayer insulation film through the metal contact mask which selectively exposes the second interlayer insulation film of the peripheral region. The bit line is exposed by selectively etching the hard mask film, the first interlayer insulation film, and the etch stop film exposed by the first metal contact hole. A first contact plug film(170) is formed inside the first metal contact hole in which the bit line is exposed. A third interlayer insulation film(180) is formed on the second interlayer insulation film including the first contact plug film. A second metal contact hole is formed by selectively etching the third interlayer insulation film through the metal contact mask. A second contact plug film(190) connected to the first contact plug film is filled inside the second metal contact hole.
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