| 摘要 |
A method for forming a fuse of a semiconductor device is provided to improve a property of a device and to generate a crack in a bottom part of a blowing fuse by etching an interlayer insulation film between adjacent fuses. A first interlayer insulation film(205) is formed on a top part of a semiconductor substrate in which a bottom structure is included. A plurality of fuses(210) is patterned on a top part of the first interlayer insulation film. A second interlayer insulation film(220) is formed on a whole top part including the fuse. The first interlayer insulation film is exposed by etching the second interlayer insulation film between adjacent fuses. A recess is formed by etching the first interlayer insulation film after using the second interlayer insulation film as a mask. The second interlayer insulation film is an oxide film. The fuse is a metal fuse.
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