| 摘要 |
A voltage detecting circuit of a semiconductor device is provided to detect a level of a back bias voltage based on a target level regardless of a change of a process by using a band gap circuit having a BJT(Bipolar Junction Transistor). A band gap circuit(200) distributes a voltage of a reference voltage terminal, and generates a first voltage(Va), a second voltage(Vb), and a third voltage(Vc). A first voltage comparing part(210) compares the first voltage with the second voltage. A first driving part(220) drives the reference voltage terminal in response to an output voltage(COMP1) of the first voltage comparing part. A second voltage comparing part(230) compares the third voltage with a distributed voltage(DIV-VOL). A second driving part(240) drives a temperature sense voltage terminal in response to an output voltage(COMP2) of the second voltage comparing part. A distributing part(250) distributes a level of the temperature sense voltage terminal with a fixed ratio, and generates a distributed voltage. A voltage sensing part(260) generates a sensing voltage(DET) corresponding to a level change of a back bias voltage terminal. A third voltage comparing part(270) compares the sensing voltage with a voltage of the reference voltage terminal or the temperature sense voltage terminal. |
