发明名称 |
RECEIVER OF SEMICONDUCTOR MEMORY APPARATUS |
摘要 |
A data input circuit is provided to prevent malfunction of a data amplifying part due to PVT(Process, Voltage, Temperature) change by controlling an electric potential of a source of a transistor of the data amplifying part through a data amplifying control part. A digital-to-analog converting part(100) generates a first converting signal(V+) and a second converting signal(V-) having an electric potential of an analog level in response to an external control signal of a digital level. A data amplifying part(220) is activated in response to a clock(clk) and a power-up signal(pwdnb). The data amplifying part compares a first data with a second data, and generates a first sense amplifier output signal(SA-outp) and a second sense amplifier output signal(SA-outn). A data amplifying control part(210) is activated in response to the clock and the power-up signal. The data amplifying control part controls the data amplifying part in response to the first converting signal and the second converting signal. |
申请公布号 |
KR20090070317(A) |
申请公布日期 |
2009.07.01 |
申请号 |
KR20070138289 |
申请日期 |
2007.12.27 |
申请人 |
HYNIX SEMICONDUCTOR INC. |
发明人 |
HWANG, TAE JIN;PARK, KUN WOO;KIM, YONG JU;SONG, HEE WOONG;OH, IC SU;KIM, HYUNG SOO;CHOI, HAE RANG;LEE, JI WANG |
分类号 |
G11C7/10;G11C7/06;G11C7/08 |
主分类号 |
G11C7/10 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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