| 摘要 |
An image sensor and a manufacturing method thereof are provided to increase the performance of image sensor by accumulating the additional on-chip circuit. A gate(20) is arranged on a semiconductor substrate(10). An electron storage part(30) is arranged in one side of the gate. A barrier layer(40) is arranged on the surface of semiconductor substrate of the gate other side. A floating diffusion part(50) is arranged at the lower part of the barrier layer. An inter-layer insulating layer(80) is arranged on the semiconductor substrate including the gate. A metal wiring(90) passes through the inter-layer insulating layer and is connected to the electron transport region. A photodiode(110) is arranged on the inter-layer insulating layer including the metal wiring and is connected to the metal wiring.
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