METHOD FOR FABRICATING CAPACITOR WITH PILLAR STORAGENODE

摘要

A method for manufacturing a capacitor with a pillar type storage node is provided to secure a leakage current characteristic by forming the pillar type storage node to secure a space between cells through a part of recesses of a sacrificial layer. A sacrificial layer is formed on a substrate(21). An open region is formed by etching the sacrificial layer. A cylinder electrode and an insulating film pattern(29B) partially reclaiming the inner side of a cylinder electrode is formed in the open region. The sacrificial layer is partially recessed. A pillar type storage node(100) is formed by forming a capping electrode(31A) reclaiming the inlet of the cylinder electrode. The sacrificial layer is removed. The dielectric and the plate are successively formed on the storage node.