| 摘要 |
A semiconductor device and a method for manufacturing the same are provided to prevent the generation of a leakage current between a gate and a source and drain region by preventing the loss of poly-oxide although the misalignment is generated. An LCD region, a source region and a channel region(36) and a drain region are formed on an active region. The gate oxidation film and polygate(38) are formed on the channel region. The gate oxide film and polygate are covered with a sidewall pattern(42). The linear nitride layer(60) is formed on the substrate. The pre-metal dielectric layer(70) is formed on the linear nitride layer. A plug is formed by selectively removing the pre-metal dielectric layer and linear nitride layer.
|
