| 摘要 |
A semiconductor device and manufacturing method thereof are provided to increase capacitance without reducing the MIM thickness by using a MIM(metal-insulator-metal) structure of dual lamination type. The bottom metal layer(100) has a concave surface. The first insulation layer(110) of uniform thickness is formed on the bottom metal layer. The intermetal layer(120a) of uniform thickness is formed on the first insulation layer. The second insulation layer(130a) of uniform thickness is formed on the intermetal layer. The overlying metal layer(140) is formed within the recess of the second insulation layer. The bottom metal layer, and the first insulation layer and intermetal layer are the first capacitor of the MIN structure. The intermetal layer, and the second insulation layer and the overlying metal layer are the second capacitor of the MIN structure.
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