| 摘要 |
A method for forming a tungsten plug is provided to suppress the formation of a void inside a via hole by forming two tungsten seed layers with different thickness. A first tungsten seed layer(120) is formed in an insulating layer(100) in which a via hole(110) is formed. A second tungsten seed layer(130) is formed on the first tungsten seed layer. The second tungsten seed layer has the thickness of 1.3 to 2.5 times of the first tungsten seed layer. A tungsten buried layer(140) is buried inside the via hole comprised of the second tungsten seed layer. The first tungsten seed layer has the thickness of 100 to 150 angstrom. The second tungsten seed layer has the thickness of 200 to 250 angstrom.
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