| 摘要 |
An image sensor and a manufacturing method thereof are provided to improve the reliability of the image sensor by increasing the transfer efficiency of electrons. A gate(30) is formed on a semiconductor substrate(10). The first impurity region(40), the second impurity region(45), and the third impurity region(50) are formed in the semiconductor substrate where the gate is formed. The gate is formed into the oxide film pattern and the poly silicon pattern. The first impurity region and the second impurity region are formed into the phosphorus or the arsenic. The third impurity region is formed into the boron ion. The first impurity region is formed into the depth which is deeper than the second impurity region. The third impurity region is formed into the depth which is shallower than the second impurity region.
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