METHOD OF ERASING A NON VOLATILE MEMORY DEVICE

摘要

An erasing method of a nonvolatile memory device is provided to improve an erasing speed by applying an erasing voltage to a memory block with an abnormal rising hunting pulse shape. A voltage pulse(310) of an abnormal rising hunting pulse shape is applied to a memory block. An abnormal rising hunting pulse includes a rising hunting section and a no down rising section. A voltage level of the abnormal rising hunting pulse drops after instantaneously rising in the rising hunting section. The voltage level of the abnormal rising hunting pulse gradually rises in the no down rising section. An erasing verification is performed after applying the abnormal rising hunting pulse.