| 摘要 |
A plasma etching method, a plasma etching apparatus, and a control program and a computer storage device are provided to form the hole shape by plasma-etching the oxide silicon layer. An oxide layer(102) and an SiN layer(103) are formed in a silicon substrate(101). An amorphous carbon layer(105), an SiON layer(106), and an O-ARC film(107) are formed on an oxide silicon layer(104) as carbon-contained layers. A patterned photoresist layer(108) is formed on the upper part of the O-ARC film into the desired pattern. An opening(109) of pattern is formed in the photoresist layer.
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