| 摘要 |
An atomic layer deposition device is provided to prevent a heater from being oxidized by being exposed to the exhaust gas by discharging the exhaust gas to the top part of a process chamber. An atomic layer deposition device comprises: a process chamber(110); a shower head(115) located at the top part of a wafer(10), spraying the gas; an exhaust part(150) discharging the exhaust gas of the process chamber; a susceptor(120) including a seating surface(121) having a plurality of wafer, formed to be inclined to the middle direction in order to guide the flow of the gas on the seating surface to the center; a heater(160) equipped at the lower part of the susceptor, and heating up the wafer; a first guide guiding the gas to the exhausting part, protruding at the seating surface center area; and a second guide(123) preventing the gas from flowing to the lower part of the susceptor, protruding at the external periphery of the susceptor.
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